Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

60

-

-

V

ΔBV

Breakdown Voltage Temperature Coefficient

-

0.06

-

V/℃

Static Drain-Source On-Resistance

2

-

-

18

mΩ

-

-

22

mΩ

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

55

-

S

Drain-Source Leakage Current

-

-

10

uA

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

32

51

nC

Gate-Source Charge

-

8

-

nC

Gate-Drain ("Miller") Charge

-

20

-

nC

Turn-on Delay Time

2

-

11

-

ns

Rise Time

-

58

-

ns

Turn-off Delay Time

-

45

-

ns

Fall Time

-80

-

ns

Input Capacitance

-

3170

5070

pF

Output Capacitance

-

280

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

230

-

pF

Gate Resistance

f=1.0MHz

-

1.7

-

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

1.2

V

t

rr

Reverse Recovery Time

2

-

50

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

48

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

2

AP9972GS/P