TDA2006 datasheet(3/12 Pages) STMICROELECTRONICS

3 / 12 page

ELECTRICAL CHARACTERISTICS

(refer to the test circuit ; VS =

± 12V, Tamb =25oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Supply Voltage

± 6

± 15

Quiescent Drain Current

Vs =

± 15V

Input Bias Current

Vs =

± 15V

0.2

µA

VOS

Input Offset Voltage

Vs =

± 15V

± 8mV

IOS

Input Offset Current

Vs =

± 15V

± 80

VOS

Output Offset Voltage

Vs =

± 15V

± 10 ± 100

Output Power

d = 10%, f = 1kHz

RL =4

Ω

RL =8

Ω

Distortion

Po = 0.1 to 8W, RL =4

Ω, f = 1kHz

Po = 0.1 to 4W, RL =8

Ω, f = 1kHz

0.2

0.1

Input Sensitivity

Po = 10W, RL =4

Ω, f = 1kHz

Po =6W, RL =8

Ω, f = 1kHz

200

220

Frequency Response (– 3dB)

Po =8W, RL =4

Ω

20Hz to 100kHz

Input Resistance (pin 1)

f = 1kHz

0.5

Ω

Voltage Gain (open loop)

f = 1kHz

Voltage Gain (closed loop)

f = 1kHz

29.5

30.5

Input Noise Voltage

B (– 3dB) = 22Hz to 22kHz, RL =4

Ω

310

µV

Input Noise Current

B (– 3dB) = 22Hz to 22kHz, RL =4

Ω

200

SVR

Supply Voltage Rejection

RL =4

Ω,Rg = 22kΩ,fripple = 100Hz (*)

Drain Current

Po = 12W, RL =4

Ω

Po =8W, RL =8

Ω

850

500

Thermal Shutdown Junction

Temperature

145

°C

(*) Referring to Figure 15, single supply.

TDA2006

3/12

TDA2006 Datasheet(PDF) 3 Page - STMicroelectronics

TDA2006 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL