STP60NF03L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STP60NF03L

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

1.5

2.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 30A

VGS= 4.5V, ID= 30A

0.008

0.0095

0.010

0.015

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID = 30A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz,

VGS=0

2550

630

215

td(on)

Turn-on Delay Time

Rise Time

VDD = 15V, ID = 30A,

RG = 4.7Ω, VGS = 4.5V

(see Figure 12)

250

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=24V, ID = 60A

VGS =5V

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