BFS17AW datasheet(2/10 Pages) VISHAY

2 / 10 page

www.vishay.com

Document Number 85039

Rev. 1.6, 08-Sep-08

BFS17A / BFS17AR / BFS17AW

Vishay Semiconductors

Maximum Thermal Resistance

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35

μm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

RthJA

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter cut-off current

VCE = 25 V, VBE = 0

ICES

100

μA

Collector-base cut-off current

VCB = 10 V, IE = 0

ICBO

100

Emitter-base cut-off current

VEB = 2.5 V, IC = 0

IEBO

μA

Collector-emitter breakdown

voltage

IC = 1 mA, IB = 0

V(BR)CEO

Collector-emitter saturation

voltage

IC = 20 mA, IB = 2 mA

VCEsat

0.1

0.6

DC forward current transfer ratio VCE = 1 V, IC = 2 mA

hFE

100

150

VCE = 1 V, IC = 25 mA

hFE

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 5 V, IC = 2 mA,

f = 300 MHz

1.5

GHz

VCE = 5 V, IC = 14 mA,

f = 300 MHz

3.5

GHz

VCE = 5 V, IC = 30 mA,

f = 300 MHz

33.2

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.6

Collector-emitter capacitance

VCE = 5 V, f = 1 MHz

Cce

0.1

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

1.1

Noise figure

VCE = 5 V, IC = 2 mA,

ZS = 50 Ω, f = 800 MHz

F2.5

Power gain

VCE = 10 V, IC = 14 mA,

ZS = 50 Ω, f = 800 MHz

Gpe

Linear output voltage - two tone

intermodulation test

VCE = 10 V, IC = 14 mA,

dIM = 60 dB, f1 = 806 MHz,

f2 = 810 MHz, ZS = ZL = 50 Ω

V1 = V2

150

Third order intercept point

VCE = 10 V, IC = 14 mA,

f = 800 MHz

IP3

23.5

dBm

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