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THBT7011DRL Datasheet(PDF) 3 Page - STMicroelectronics |
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THBT7011DRL Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() V I I H IBO V RM VR VBR BO V PP I R I Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous Reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Type IRM @VRM IR @VR VBO @IBO IH C max. max. note 1 max. note 2 min. max. min note 3 max note 4 µAV µAV V mA mA mA pF THBT7011D 5 66 50 70 89 50 400 150 80 STATIC PARAMETERS BETWEEN TIP AND GND, RING AND GND TEST CIRCUITS FOR IPP Transversal mode TIP or RING GND THBT RP IPP See test circuit 3 Symbol Parameter Value Unit Rth (j-a) Junction to ambient 170 °C/W THERMAL RESISTANCES THBT7011D 3/8 |
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