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VNP10N07 Datasheet(PDF) 3 Page - STMicroelectronics

Part # VNP10N07
Description  O"MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNP10N07 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
∗∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =15 V
Id =5 A
Vgen =10 V
Rgen =10
Ω
(see f igure 3)
50
80
230
100
100
160
400
180
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =15 V
Id =5 A
Vgen =10 V
Rgen = 1000
Ω
(see f igure 3)
600
0.9
3.8
1.7
900
2
6
2.5
ns
µs
µs
µs
(di/ dt)on
Turn-on Current Slope
VDD =15 V
ID =5 A
Vin =10 V
Rgen =10
Ω
60
A/
µs
Qi
Total Input Charge
VDD =12 V
ID =5 A
Vin = 10 V
30
nC
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VSD (
∗)Forward On Voltage
ISD =5 A
Vin =0
1.6
V
trr (
∗∗)
Qrr (
∗∗)
IRRM (
∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 5 A
di/dt = 100 A/
µs
VDD =30 V
Tj =25
oC
(see t est circuit, figure 5)
125
0.3
4.8
ns
µC
A
PROTECTION
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
Ilim
Drain Current Limit
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
7
7
10
10
14
14
A
A
tdlim (
∗∗) Step Response
Current Limit
Vin =10 V
Vin =5 V
20
50
30
80
µs
µs
Tjsh (
∗∗) Overtemperature
Shutdown
150
oC
Tjrs (
∗∗) Overtemperature Reset
135
oC
Igf (
∗∗)
Fault Sink Current
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
50
20
mA
mA
Eas (
∗∗) Single Pulse
Avalanche Energy
st arting Tj =25
oCVDD =20 V
Vin =10 V
Rgen =1 K
Ω L= 10 mH
0. 4
J
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
∗∗) Parameters guaranteed by design/characterization
VNP10N07
3/11



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