13

4964B–AUTO–07/07

ATA6842

8

Internal Voltage Supply VI

8.1 Output voltage

C(VI) = 100 nF,

I(VI) = –1 mA to 0 mA

VI

VI

4.35

5.35

V

A

8.2

Lower threshold

undervoltage

RESN = low

VI

3V

A

8.3

Upper threshold

undervoltage

RESN = high

VI

VtU

hi

4.3

V

A

8.4

Lower threshold

overvoltage

RESN = high

VI

VtO

lo

5.4

V

A

8.5

Upper threshold

overvoltage

RESN = low

VI

6V

A

8.6

Hysteresis

undervoltage

VI

VtU

hys

0.4

1

V

A

8.7

Hysteresis

overvoltage

VI

VtO

hys

50

200

mV

A

8.8 Short-circuit current

VI = 0V

VI

Isc()

20

150

mA

A

9

Current Measurement, x = 1, 2

9.1 Output voltage low

I(BxCO) = 20 µA, BxCO = low

BxCO

Vs()lo

–10

+30

mV

A

9.2 Saturation voltage

I(BxCO) = –750 µA,

BxCO = high,

Vs(BxCO)hi =

V5–V(BxCO)

BxCO

Vs()hi

100

mV

A

9.3

Short-circuit current

low

BxCO = low, V(BxCO) = V5

BxCO

Isc()lo

0.5

2

mA

A

9.4

Short-circuit current

high

BxCO = high,

V(BxCO) = 0V

BxCO

Isc()hi

–25

–2.5

mA

A

9.5

Input offset voltage

V(BxCO) – (V(BxCI)

– V(BxCG))

Vos() = V(BxCI) – V(BxCG)

T

BxCO

Vos()

–3.5

–3

–3.5

+3.5

+3

+3.5

mV

mV

mV

A

9.6 Leakage current

V(BxCI), V(BxCG) =

–0.7V to +0.35V

BxCI

BxCG

Ilk()

–1.75

–1

–0.25

µA

A

9.7 Input voltage range

BxCI

BxCO

Vi()

–0.7

+0.35

V

A

9.8

Difference in leakage

current

V(BxCI), V(BxCG) =

–0.7V to +0.35V,

dIlk(BxCI, BxCG),

B1CI, B1CG and

B2CI, B2CG

dIlk()

–0.25

+0.25

µA

A

5.

Electrical Characteristics (Continued)

Operating conditions: V12 = 6.5V to 26V, V5 = 5V ±3%, RREF = 10 k

Ω ±2%, T

No. Parameters

Test Conditions

Pin

Symbol

Min.

Typ.

Max.

Unit

Type*

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Note:

1. Reduced operation mode means either

- Voltage at pin TCFET could be beyond specified limits