PRODUCT SELECTION GUIDE

PARAMETER

WS57C128FB-35

WS57C128FB-45

WS57C128FB-55

WS57C128FB-70

Address Access Time (Max)

35 ns

45 ns

55 ns

70 ns

Chip Select Time (Max)

35 ns

45 ns

55 ns

70 ns

Output Enable Time (Max)

20 ns

25 ns

25 ns

25 ns

WS57C128FB

3-7

HIGH SPEED 16K x 8 CMOS EPROM

KEY FEATURES

— 35 ns

Available

— Latch-up Immunity Up to 200 mA

GENERAL DESCRIPTION

The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is

manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming

only 90 mA.

Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal

solution for applications which require fast access times, low power, and non-volatility. Typical applications include

systems which do not utilize mass storage devices and/or are board space limited.

The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems

which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both

J-leaded and leadless surface mount packages.

PGM

A13

A8

A9

A11

OE

A10

CE

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

NC

OE

CE

NC

1

43

2

32 31 30

29

28

27

26

25

24

23

22

21

5

6

7

8

9

10

11

12

13

14 15 16 17 18 19 20

TOP VIEW

Chip Carrier

CERDIP

PIN CONFIGURATION

PINS

PGM

CE

OE

VPP

VCC OUTPUTS

MODE

Read

X

VIL

VIL

VCC VCC

DOUT

Output

Disable

XX

VIH

VCC VCC

High Z

Standby

X

VIH

XVCC

VCC

High Z

Program

VIL

VIL

VIH

VPP

VCC

DIN

Program

Verify

VIH

VIL

VIL

VPP

VCC

DOUT

Program

Inhibit

XVIH

XVPP

VCC

High Z

X can be VIL or VIH.

MODE SELECTION

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