ST1N60 datasheet(2/4 Pages) SUNTAC

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ST1N60

POWER MOSFET

Page 2

ORDERING INFORMATION

Part Number

Package

.................ST1N60-251...........................................TO-251

.................ST1N60-252...........................................TO-252

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25

CST1N60

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

(VGS = 0 V, ID = 250

V(BR)DSS

600

Drain-Source Leakage Current

(VDS = 600 V, VGS = 0 V)

(VDS = 480 V, VGS = 0 V, TJ = 125

)

IDSS

0.1

0.3

Gate-Source Leakage Current-Forward

(Vgsf = 20 V, VDS = 0 V)

IGSSF

100

Gate-Source Leakage Current-Reverse

(Vgsr = 20 V, VDS = 0 V)

IGSSR

100

Gate Threshold Voltage

(VDS = VGS, ID = 250

VGS(th)

2.0

4.0

Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) *

RDS(on)

8.0

Forward Transconductance (VDS

50 V, ID = 0.5A) *

gFS

0.5

mhos

Input Capacitance

Ciss

210

Output Capacitance

Coss

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz)

Crss

4.2

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

(VDD = 300 V, ID = 1.0 A,

VGS = 10 V,

RG = 18 ) *

Total Gate Charge

8.5

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

(VDS = 400 V, ID = 1.0 A,

VGS = 10 V)*

Qgd

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

4.5

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

7.5

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

VSD

1.5

Forward Turn-On Time

ton

Reverse Recovery Time

(IS = 1.0 A, VGS = 0 V,

dIS/dt = 100A/µs)

trr

350

500

* Pulse Test: Pulse Width

300µs, Duty Cycle

** Negligible, Dominated by circuit inductance

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