3

Pin Description

Symbol

Parameters

Min

Typ

Max

Unit

Conditions

V

PP1

High voltage positive supply

15

110

V

T

V

PP2

Positive charge pump output voltage

V

V

V

T

V

NN1

High voltage negative supply

V

-110

V

T

V

NN2

Negative charge pump output voltage

V

V

V

T

V

DD1

Low voltage supply

3.0

5.5

V

T

V

DD2

Low voltage supply

10.8

13.5

V

T

I

PP1Q

V

250

400

µAT

I

NN1Q

V

250

500

µAT

I

PP1

V

0.8

mA

HV

V

T A = -40°C to +85°C

I

NN1

V

1.0

mA

I

DD1Q

V

10

µA

I

DD2Q

V

4.0

mA

Electrical Characteristics, cont’d.

V

PP1

Positive high voltage supply

V

PP2

Positive gate voltage supply. Generated by an internal linear regulator.

V

NN1

Negative high voltage supply

V

NN2

Negative gate voltage supply. Generated by an internal linear regulator.

V

DD1

+3.3V to 5.0V supply for input and output logic

V

DD2

+12V supply for analog/logic circuit

GND

Low voltage ground

P

GND

High voltage power ground

Input1-

Inverting input of op-amp 1.

Input1+

Noninverting input of op-amp 1.

Output1

Output of op-amp 1.

Input2-

Inverting input of op-amp 2.

Input2+

Noninverting input of op-amp 2.

Output2

Output of op-amp 2.

Input3-

Inverting input of op-amp 3.

Input3+

Noninverting input of op-amp 3.

Output3

Output of op-amp 3.

V

ref

External input reference voltage for zero crossing detection.

On/Off

Enables/Disables HV

osc1

Input 1 for external resonator. Connect to GND when not in use.

osc2

Input 2 for external resonator. Leave floating when not in use.

oscin

External oscillator input. Zero to V

oscout

Oscillator output; 1/4 frequency of external resonator. 50% duty cycle.

HV

OUT

High voltage output. Voltage swings from V

V

psen

Pulse by pulse over current sensing for internal P-Channel MOSFET.

V

nsen

Pulse by pulse over current sensing for internal N-Channel MOSFET.

P

gate

Gate drive for external P-channel MOSFET.

Ngate

Gate drive for external N-channel MOSFET.

HV441