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2SC3647 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3647 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type Transistors www.kexin.com.cn 1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity High-Voltage Switching Applications 2SC3647 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6V Collector Current IC 2A Collector Current (Pulse) ICP 3A PC 500 mW PC* 1.5 W Jumction temperature Tj 150 Storage temperature Range Tstg -55to+150 * Mounted on ceramic board (250 mm 2 x 0.8 mm) Collector Power Dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB = 100V , IE = 0 100 nA Emitter Cut-off Current IEBO VEB =4V , IC = 0 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC = 10uA , IE = 0 120 V Collector-Emitter Breakdown Voltage V(BR)CEO IC =1mA , RBE = 100 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10uA , IC =0 6 V DC Current Gain hFE VCE =5V , IC = 100mA 100 400 Collector-Emitter Saturation Voltage VCE(sat) IC =1A , IB = 100mA 0.22 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC =1A , IB = 100mA 0.85 1.2 V Gain-Bandwidth Product fT VCE = 10V , IC = 100mA 120 MHz Collector Output Capacitance Cob VCB = 10V , IE = 0 , f = 1MHz 25 pF Turn-On Time ton 80 Storage Time tstg 750 Fall Time tf 40 ns See Test Circuit. |
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