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2SC4555 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC4555
Description  NPN Epitaxial Planar Silicon Transistor
PDF  2 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4555 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
1 Emitter
2 Base
3 Collector
Features
Very small-sized package
Low collector-to-emitter saturation voltage.
NPN Epitaxial Planar Silicon Transistor
2SC4555
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5V
Collector current
IC
500
mA
Collector current(Pulse)
ICP
1A
Collector dissipation
PC
150
mW
Junction temperature
Tj
105
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =15V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB =4V, IC=0
0.1
ìA
DC current gain
hFE
VCE =2V , IC = 10mA
135
600
Gain bandwidth product
fT
VCE =2V , IC =50mA
300
MHz
Output capacitance
Cob
VCB = 10V, f = 1MHz
4.0
pF
IC =5mA , IB =0.5mA
30
V
IC =200mA , IB = 10mA
160
300
Base-to-emitter saturation voltage
VBE(sat) IC =200mA , IB = 10mA
0.95
1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC =10ìA , IE =0
20
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC =1mA , RBE =
15
V
Emitter-to-base breakdown voltage
V(BR)EBO IE =10ìA , IC =0
5
V
Collector-to-emitter saturation voltage
VCE(sat)
hFE Classification
Marking
Rank
5
6
7
hFE
135
270
200
400
300
600
UT


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