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2SD1997 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1997 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn NPN Epitaxial Planar Silicon Transistor 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6V Collector current IC 3A Collector current (pulse) ICP 5A Collector dissipation PC 1.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB =30V , IE =0 1.0 ìA VCE =2V , IC =0.5A 70 VCE =2V , IC =2A 50 Gain bandwidth product fT VCE =2V , IC = 0.5A 100 MHz Output capacitance Cob VCB = 10V , f = 1MHz 40 pF Collector-emitter saturation voltage VCE(sat) IC =1A , IB = 50mA 0.12 0.3 V Base-emitter on state voltage VBE(ON) ICE =2V , IC =1A 1 2 5 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 40 V IC = 10ìA , RBE = 40 V IC = 10mA , RBE = 3 Diode forward voltage VF IF = 0.5A 1.5 V Base-emitter resistance RBE 0.8 kÙ Base resistance R1 120 160 200 Ù DC current Gain hFE Collector-to-emitter breakdown voltage V(BR)CEO Marking Marking DO |
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