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2N6500 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6500 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2N6500 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VCER Collector-Emitter Voltage RBE= 50Ω 110 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 3 A PD Total Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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