2N6934 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2N6933/34/35

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

2N6933

300

2N6934

350

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

2N6935

IC= 0.2A ;L= 25mH

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 15A; IB= 3A

IC= 15A; IB= 3A; TC= 100℃

1.0

2.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 15A; IB= 3A

IC= 15A; IB= 3A; TC= 100℃

1.5

ICEV

Collector Cutoff Current

VCE= VCEV; VBE= -1.5V

VCE= VCEV; VBE= -1.5V; TC= 100℃

0.1

1.0

IEBO

Emitter Cutoff Current

VEB= 8V; IC=0

2.0

hFE

DC Current Gain

IC= 15A ; VCE= 3V

COB

Output Capacitance

IE= 0;VCB= 10V,ftest= 1.0MHz

150

Switching Times; Resistive Load

Delay Time

0.1

μs

Rise Time

0.7

μs

Storage Time

2.5

μs

Fall Time

IC= 15A; IB1= -IB2= 3A; RL= 20Ω;

VBB= -5V; VCC= 300V; tp= 30μs

0.5

μs

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