BDT65AF datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDT65F/AF/BF/CF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDT65F

BDT65AF

BDT65BF

100

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDT65CF

IC= 30mA ;IB=0

120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 20mA

2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 100mA

3.0

VBE(on)

Base-Emitter On Voltage

IC= 5A ; VCE= 4V

2.5

VECF

C-E Diode Forward Voltage

IF= 5A

2.0

ICEO

Collector Cutoff Current

VCE=

2VCEOmax; IB= 0

ICBO

Collector Cutoff Current

VCB= VCBOmax;IE= 0

VCB=

2VCBOmax;IE= 0;TC= 150℃

0.4

2.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

hFE-1

DC Current Gain

IC= 1A ; VCE= 4V

1500

hFE-2

DC Current Gain

IC= 5A ; VCE= 4V

1000

hFE-3

DC Current Gain

IC= 12A ; VCE= 4V

1500

COB

Output Capacitance

IE= 0 ; VCB= 10V; ftest=1MHz

200

Switching times

ton

Turn-On Time

2.5

μs

toff

Turn-Off Time

IC= 5A; IB1= -IB2= 20mA;

VCC= 30V

μs

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