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BD201F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD201F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD201F/203F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201F 60 VCBO Collector-Base Voltage BD203F 60 V BD201F 45 VCEO Collector-Emitter Voltage BD203F 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB B Base Current 3 A PC Collector Power Dissipation @ TC=25℃ 32 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.3 ℃/W isc Website：www.iscsemi.cn |
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