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2SA1290 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1290 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1290 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-3.5A; IB=-0.175A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-2V 70 280 fT Transition frequency IC=-1A ; VCE=-5V 100 MHz Switching times ton Turn-on time 0.1 μs tstg Storage time 0.5 μs tf Fall time VCC=-20V; IC=-3A IB1=-IB2=-0.15A;RL=6.67Ω 0.1 μs hFE Classifications Q R S 70-140 100-200 140-280 2 |
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