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2SA1303 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1303 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1303 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -2.0 V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE DC Current Gain IC= -5A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 400 pF fT Current-Gain—Bandwidth Product IE= 2A ; VCE= -12V 50 MHz Switching Times ton Turn-on Time 0.25 μs tstg Storage Time 0.85 μs tf Fall Time IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V 0.2 μs hFE Classifications O P Y 50-100 70-140 90-180 2 |
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