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2N5468 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5468 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5468 2N5469 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE=ratedVCEO;VBE(off)=1.5V TC=125℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=3A ; VCE=5V 15 60 fT Trainsistion frequency IC=1A ; VCE=10V;f=1MHz 2.5 MHz |
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