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2SC1617 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1617 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1617 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5 A 1.2 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.5 A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 30 150 hFE-2 DC current gain IC=7A ; VCE=5V 15 fT Transition frequency IC=0.5A ; VCE=5V 10 MHz |
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