2SC2525 datasheet(2/3 Pages) ISC

Part #	2SC2525

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2525

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=1mA; RBE=∞

120

V(BR)CBO

Collector-base breakdown voltage

IC=50μA; IE=0

120

V(BR)EBO

Emitter-base breakdown voltage

IE=50μA; IC=0

VCEsat

Collector-emitter saturation voltage

IC=5 A;IB=0.5 A

0.7

1.8

VBE

Base-emitter voltage

IC=5A ; VCE=5V

1.25

1.7

ICBO

Collector cut-off current

VCB=120V; IE=0

μA

IEBO

Emitter cut-off current

VEB=7V; IC=0

μA

hFE-1

DC current gain

IC=1A ; VCE=5V

200

hFE-2

DC current gain

IC=7A ; VCE=5V

Transition frequency

IC=1A ; VCB=10V,f=1MHz

MHz

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

180

300

Switching times

Rise time

0.3

μs

Storage time

1.3

μs

Fall time

IC=7.5A; RL=4Ω

IB1=-IB2=0.75A

0.2

μs

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