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2SC3179 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3179 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3179 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0 60 V VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.2 A 0.6 V ICBO Collector cut-off current VCB=80V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V 40 fT Transition frequency IE=-0.2A ; VCE=12V 15 MHz COB Output capacitance f=1MHz ; VCB=10V 60 pF Switching times resistive load ton Turn-on time 0.2 μs ts Storage time 1.9 μs tf Fall time IC=2A IB1=-IB2=0.2A RL=10Ω;VCC=20V 0.29 μs |
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