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2SC4233 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4233 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4233 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=∞ 800 V VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 100 μA IEBO Emitter cut-off current At rated voltage 100 μA hFE-1 DC current gain IC=1.5A ; VCE=5V 8 hFE-2 DC current gain IC=1mA ; VCE=5V 7 fT Transition frequency IC=0.3A ; VCE=10V 8 MHz Switching times ton Turn-on time 0.5 μs tstg Storage time 3.5 μs tf Fall time VBB2=4V; IC=1.5A IB1=0.3A;IB2=0.6A RL=170Ω 0.3 μs |
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