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2SD797 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD797 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD797 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=15A; IB=3A 1.5 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A 2.5 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 200 hFE-2 DC current gain IC=15A ; VCE=5V 10 COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 400 pF fT Transition frequency IC=1A ; VCE=5V 1.5 MHz Switching times ton Turn-on time 2.5 μs tstg Storage time 6.0 μs tf Fall time RL=10Ω;IB1=-IB2=0.5A; VCC=50V 1.5 μs 2 |
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