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2SD1229 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1229 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1229 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 70 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=10mA 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=10mA 2.0 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=5A ; VCE=2V 2000 fT Transition frequency IC=5A ; VCE=5V 20 MHz Switching times ton Turn-on time 0.6 μ s tstg Storage time 3.0 μ s tf Fall time IC=500IB1=-500IB2=5A VCC=20V;RL=4Ω 1.8 μ s |
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