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2SD1264A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1264A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1264 2SD1264A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1264 150 VCEO Collector-emitter voltage 2SD1264A IC=5mA ,IB=0 180 V VCBO Collector-base voltage IC=50μA ,IE=0 200 V VEBO Emitter-base voltage IC=500μA ,IC=0 6 V VCEsat Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.0 V VBE Base-emitter voltage IC=0.4A ; VCE=10V 1.0 V IEBO Emitter cut-off current VEB=4V; IC=0 50 μA ICBO Collector cut-off current VCB=200V; IE=0 50 μA hFE-1 DC current gain IC=0.15A ; VCE=10V 60 240 hFE-2 DC current gain IC=0.4A ; VCE=10V 50 fT Transition frequency IC=0.5A; VCE=10V,f=10MHz 20 MHz hFE-1 Classifications Q P 60-140 100-240 |
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