| Electronic Components Datasheet Search |
|
2SD1415A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1415A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 3.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 2000 15000 hFE-2 DC current gain IC=6A ; VCE=3V 1000 Switching times ton Turn-on time 0.3 μs tstg Storage time 5.1 μs tf Fall time IB1=-IB2=6mA VCC≈45V ,RL=15Ω 0.6 μs |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |