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2SD2374 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2374 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2374 2SD2374A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD2374 60 VCEO Collector-emitter voltage 2SD2374A IC=30mA ; IB=0 80 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.375A 1.2 V VBE Base-emitter voltage IC=3A ; VCE=4V 1.8 V 2SD2374 VCB=60V; IE=0 ICBO Collector cut-off current 2SD2374A VCB=80V; IE=0 200 μA 2SD2374 VCE=30V; IB=0 ICEO Collector cut-off current 2SD2374A VCE=60V; IB=0 300 μA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=4V 70 250 hFE-2 DC current gain IC=3A ; VCE=4V 10 fT Transition frequency IC=0.5A ; VCE=10V 30 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 2.5 μs tf Fall time IC=1.0A; IB1=-IB2=0.1A VCC=50V 0.4 μs hFE-1 Classifications Q P 70-150 120-250 |
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