2SC1383L datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

2SC1383L/2SC1384L

NPN Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

PC  Ta

IC  VCE

IC  IB

VCE(sat)  IC

VBE(sat)  IC

hFE  IC

fT  IE

Cob  VCB

VCER  RBE

160

120

1.2

1.0

0.8

0.6

0.4

0.2

Ambient temperature T

a (°C)

010

1.50

1.25

1.00

0.75

0.50

0.25

= 10 mA

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

= 25°C

Collector-emitter voltage V

CE (V)

012

1.2

1.0

0.8

0.6

0.4

0.2

VCE

= 10 V

= 25°C

Base current I

B (mA)

0.01

0.1

0.001

0.01

0.1

IC / IB

= 10

= 75°C

°C

−25°C

Collector current I

C (A)

0.01

0.1

0.01

0.1

100

IC / IB

= 10

= −25°C

°C

Collector current I

C (A)

0.01

0.1

600

500

400

300

200

100

VCE

= 10 V

= 75°C

°C

−25°C

Collector current I

C (A)

−1

−10

−100

200

160

120

VCB

= 10 V

= 25°C

Emitter current I

E (mA)

100

= 0

= 1 MHz

= 25°C

Collector-base voltage V

CB (V)

0.1

100

120

100

= 10 mA

= 25°C

2SC1384

2SC1383

Base-emitter resistance R

BE (kΩ)

01-Jun-2002 Rev. A

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