Elektronische Bauelemente

2SC1623

150 mA, 60 V

NPN Epitaxial Planar Transistor

01-June-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

DESCRIPTION

The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application.

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

5

V

Collector Currrent

150

mA

Total Power Dissipation

Pd

250

mW

Junction, Storage Temperature

+150, -55 ~ +150

℃

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=100uA

BVCEO

50

-

-

V

IC=1mA

BVEBO

5

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=60V

IEBO

-

-

100

nA

VEB=5V

*VCE(sat)

-

-

250

mV

IC=100mA, IB=10mA

*VBE(sat)1

-

-

1.0

V

IC=100mA, IB=10mA

90

-

600

VCE=6V, IC=1mA

25

-

-

VCE=6V, IC=150mA

80

-

-

VCE=1V, IC=10mA

fT

80

-

-

MHz

VCE=10V, IC=1mA, f=100MHz

Cob

-

-

3.5

pF

VCB=10V, f=1MHz, IE=0A

* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%

Rank

P

Y

G

B

Range

90 - 180

135 - 270

200 - 400

300 - 600

EMITTER

Dim

Min

Max

A

2.70

3.10

B

1.30

1.70

C

1.00

1.30

D

0.35

0.50

G

1.90 REF.

H

0.00

0.10

J

0.10

0.26

K

0.20

0.60

L

1.25

1.65

S

2.25

3.00

All Dimension in mm

SC-59

S

G

D

B

L

A

1

3

2

Top View

H

C

J

K

BASE

COLLECTOR