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2SC3356 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC3356 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual 2SC3356 NPN Silicon Plastic-Encapsulate Transistor FEATURES http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tamb =25 C unless o o therwise specified) 0.2 0.1 W IC Collector Current -Continuous A 01-Jun-2002 Rev. A Page 1 of 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 20 12 3 TJ, Tstg Junction and Storage Temperature -55~150 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PC Collector Dissipation V V V C C o o Power Dissipation n n RoHS Compliant Product K J C H L A B S G V 3 1 2 D Top View 1.BASE 2.EMITTER 3.COLLECTOR Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10 µA, IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 12 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 3 V Collector cut-off current ICBO VCB= 10 V , IE=0 1 µA Emitter cut-off current IEBO VEB= 1V , IC=0 1 µA DC current gain hFE VCE= 10V, IC= 20mA 50 300 Transition frequency fT VCE=10V, IC= 20mA 6 GHz Noise figure F VCE=10V, IC= 7mA, f = 1GHz 2 dB CLASSIFICATION OF hFE Marking R23 R24 R25 Rank Q R S Range 50-100 80-160 125-250 A suffix of "-C" specifies halogen & lead-free |
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