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2SC4226 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4226 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente 2SC4226 NPN Silicon Plastic Encapsulated Transistor 01-June-2002 Rev. A Page 1 of 3 Top View A L C B D G H J F K E 1 2 3 1 2 3 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package PACKAGING INFORMATION Weight: 0.0074 g MARKING CODE r23, r24 , r25 ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current – Continuous IC 0.1 A Collector Power Dissipation PC 150 mW Junction, Storage Temperature TJ, TSTG +150, -65 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector Cut-off Current ICBO - - 1 μA VCB = 10 V, IE = 0 Emitter Cut-off Current IEBO - - 1 μA VEB = 1 V, IC = 0 DC Current Gain hFE* 40 - 250 VCE = 3V, IC = 7 mA Transition Frequency fT 3.0 - - GHz VCE = 3V, IC = 7 mA Feed Back Capacitance Cre - - 1.5 pF VCE = 3V, IE = 0, f = 1 MHz Noise Figure NF - - 2.5 dB VCE = 3V, IC = 7mA, f = 1GHz * Pulse Test: Pulse Width ≦ 350μs, Duty Cycle ≦ 2% CLASSIFICATION OF hFE Marking r23 r24 r25 Rank P Q R Range 40 - 80 70 - 140 125 - 250 SOT-323 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 |
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