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2SC5585F Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC5585F Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual RoHS Compliant Product 2SC5585F NPN Silicon General Purpose Transistor FEATURES Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA BX MARKING CODE High Current Dim Min Max A 1.50 1.70 B 0.78 0.82 C 0.80 0.82 D 0.28 0.32 G 0.90 1.10 H 0.00 0.10 J 0.10 0.20 K 0.35 0.41 L 0.49 0.51 S 1.50 1.70 All Dimension in mm SOT-523 S G D B L A 1 3 2 Top View H C J K Elektronische Bauelemente 1. Emitter Maximum Ratings (Ta=25 oC unless otherwise specified) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO PC Tj Tstg 15 V V V A W 12 6 0.5 IC 0.15 -55~+150 -55~+150 Symbol Value Unit Electrical Characteristics (Tamb=25 o C unless otherwise specified) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Collector Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 15 12 6 270 32 0 7.5 0.1 0.1 680 0.25 VIC=10 μA, IE=0 IC=1mA, IB=0 IE=10 μA, IC=0 VCB=15V, IE=0 VEB= 6V, IC=0 VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz V V μA μA V MHz pF Typ. Max. Unit Conditions Transition frequency 01-Jun-2002 Rev. A Page 1 of 2 2. Base 3. Collector oC oC |
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