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2SD2142 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD2142 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual 2SD2142 NPN Plastic Plastic-Encapsulate Transistor Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 32 VEBO Emitter-Base Voltage 12 IC Collector Current -Continuous mA PC Collector Dissipation 200 mW V V V 300 TJ, Tstg Junction and Storage Temperature -55~150 C C o o 01-Jun-2007 Rev. A Page 1 of 2 FEATURES Darlington connection for a high hFE High input impedance MARKING：R1M ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 12 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=12V,IC=0 0.1 μA DC current gain hFE VCE=3V,IC=100mA 5000 Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=0.2mA 1.4 V Transition frequency fT VCE=5V,IC=10mA,f=100MHz 200 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 2.5 pF 1.BASE 2.EMITTER 3.COLLECTOR RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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