ST2N6520 datasheet(2/2 Pages) SEMTECH_ELEC

2 / 2 page

Dated : 07/12/2002

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

ST 2N6520

Characteristics at Tamb=25

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE=10V, -IC=1mA

at -VCE=10V, -IC=10mA

at -VCE=10V, -IC=30mA

at -VCE=10V, -IC=50mA

at -VCE=10V, -IC=100mA

hFE

200

Collector Base Breakdown Voltage

at -IC=100μA

-BVCBO

350

Collector Emitter Breakdown Voltage

at -IC=1mA

-BVCEO

350

Emitter Base Breakdown Voltage

at -IE=10μA

-BVEBO

Collector Cutoff Current

at -VCB=250V

-ICBO

Emitter Cutoff Current

at -VEB=4V

-IEBO

Collector Base Capacitance

at -VCB=20V, f=1MHz

Ccb

Emitter Base Capacitance

at –VEB=0.5V, f=1MHz

Ceb

100

Base Emitter Saturation Voltage

at -IC=10mA, -IB=1mA

at -IC=20mA, -IB=2mA

at -IC=30mA, -IB=3mA

-VBE(sat)

0.75

0.85

0.9

Collector Emitter Saturation Voltage

at -IC=10mA, -IB=1mA

at -IC=20mA, -IB=2mA

at -IC=30mA, -IB=3mA

at -IC=50mA, -IB=5mA

-VCE(sat)

0.3

0.35

0.5

Base Emitter On Voltage

at -VCE=10V, -IC=100mA

-VBE(on)

Current Gain Bandwidth Product

at -VCE=20V, -IC=10mA, f=20MHz

200

MHz

Turn On Time

at -VBE(off)=2V, -VCC=100V

-IC=50mA, -IB1=10mA

ton

200

Turn Off Time

at -VCC=100V, -IC=50mA, -IB1=-IB2=10mA

toff

3.5

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