Dated : 21/12/2005
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BCW60
Characteristics at Ta =25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 10 µA
at VCE = 5 V, IC = 2 mA
at VCE = 1 V, IC = 50 mA
BCW60B
BCW60C
BCW60D
BCW60B
BCW60C
BCW60D
BCW60B
BCW60C
BCW60D
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
20
40
100
180
250
380
70
90
100
-
-
-
-
-
-
-
-
-
-
-
-
310
460
630
-
-
-
-
-
-
-
-
-
-
-
-
Collector Saturation Voltage
at IC = 10 mA, IB = 0.25 mA
VCEsat
0.05
-
0.35
V
Collector Saturation Voltage
at IC = 50 mA, IB = 1.25 mA
VCEsat
0.1
-
0.55
V
Base Saturation Voltage
at IC = 10 mA, IB = 0.25 mA
VBEsat
0.6
-
0.85
V
Base Saturation Voltage
at IC = 50 mA, IB = 1.25 mA
VBEsat
0.7
-
1.05
V
Base-Emitter Voltage
at IC = 2 mA, VCE = 5V
VBE(on)
0.55
-
0.75
V
Collector Base Cutoff Current
at VCB = 32 V
at VCB = 32 V, T
j = 150
O
C
ICBO
ICBO
-
-
-
-
20
20
nA
µA
Emitter-Base Cutoff Current
at VEB = 4 V
IEBO
-
-
20
nA
Gain -Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100
250
-
MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
-
1.7
-
pF
Emitter-Base Capacitance
at VEB = 0.5 V, f = 1 MHz
CEBO
-
11
-
pF
Noise figure
at IC = 200 µA, VCE = 5 V, RS = 2 KΩ, f =1 KHz, Δf=200Hz
NF
-
2
6
dB
Thermal Resistance, Junction to Ambient
RθJA
-
-
500
1)
K/W
1) Transistor mounted on an FR4 printed-circuit board.
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