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Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 2 of 4

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

SSD408

Source Leakage Current(Tj=25 )

:

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

1.0

-

2.5

V

Forward Transconductance

-

25

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=55 )

:

-

-

5

uA

-

-

18

-

-

27

m

-

19.8

25

Gate-Source Charge

-

2.5

-

Gate-Drain (“Miller”) Change

-

3.5

-

nC

-

4.5

-

Rise Time

-

3.9

-

Turn-off Delay Time

-

17.4

-

Fall Time

-

3.2

-

ns

Input Capacitance

-

1040

1250

Output Capacitance

-

180

-

Reverse Transfer Capacitance

-

110

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.0

V

-

-

18

A

-

19

-

ns

Reverse Recovery Charge

-

8

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Staring Tj=25 , V

:

3. Pulse width 300us, duty cycle 2%.