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Dated :12/01/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
LS133
SILICON EPITAXIAL PLANAR DIODE
High speed switching diode
Features
• Glass sealed envelope
• High speed
• High reliability
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
90
V
DC Reverse Voltage
VR
80
V
Mean Rectifying Current
Io
130
mA
Peak Forward Current
IFM
400
mA
Surge Current (1s)
Isurge
600
mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
175
O
C
Storage Temperature Range
Ts
- 65 to + 175
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
1.2
V
Reverse Current
at VR = 80 V
IR
0.5
µA
Capacitance Between Terminals
at VR = 0.5 V, f = 1 MHz
CT
2
pF
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 50 Ω
trr
4
ns
LS-34
QuadroMELF
Dimensions in mm
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