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Dated : 16/01/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
SDB720WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for high frequency rectification
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
40
V
Reverse Voltage
VR
40
V
Average Forward Current
IO
0.5
A
Non-repetitive Peak Forward Surge Current
IFSM
2
A
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 500 mA
VF
-
0.55
V
Reverse Current
at VR = 35 V
IR
-
100
µA
Terminal Capacitance
at VR = 0 V, f = 1 MHz
CT
60
-
pF
Reverse Recovery Time
at IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω
trr
5
-
nS
Anode
2
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
RH
Top View
Marking Code: "RH"
Simplified outline SOD-323 and symbol
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