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Dated : 06/05/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
TO-92 Plastic Package
Weight approx. 0.19g
ST 2SC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
35
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
4
V
Collector Current
IC
50
mA
Base Current
IB
10
mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
125
O
C
Storage Temperature Range
TS
-55 to +125
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 12 V, IC = 2 mA
Current Gain Group
R
O
Y
hFE
hFE
hFE
40
70
120
-
-
-
80
140
240
-
-
-
Collector Cutoff Current
at VCB = 35 V
ICBO
-
-
0.1
µA
Emitter Cutoff Current
at VEB = 4 V
IEBO
-
-
0.1
µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
VCE(sat)
-
-
0.4
V
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
VBE(sat)
-
-
1
V
Current Gain Bandwidth Product
at VCE = 10 V, IC = 1 mA
fT
100
-
400
MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
2
3.2
pF
Power Gain
at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz
Gpe
27
30
33
dB
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