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Dated : 17/10/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMBD142W
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Applications
• for switching circuits
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
80
V
Reverse Voltage
VR
80
V
Forward Current
IF
100
mA
Peak Forward Current
IFM
225
mA
Non-repetitive Peak Forward Surge Current (t = 1 s)
IFSM
500
mA
Junction Temperature
TJ
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
-
1.2
V
Reverse Current
at VR = 75 V
IR
-
0.1
µA
Reverse Voltage
at IR = 100 µA
VR
80
-
V
Terminal Capacitance
at VR = 0, f = 1 MHz
Ct
-
15
pF
Reverse Recovery Time
at IF = 10 mA, VR = 6 V, Irr = 0.1 • IR, RL = 100 Ω
trr
-
10
ns
Marking Code: D3
2
1
3
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