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RFMA1013-1W Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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RFMA1013-1W Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 3 page ![]() RFMA1013-1W UPDATED 05/08/2008 10.30 – 13.30 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised May 2008 RFMA1013 -1W Excelics Different Packages Are Available FEATURES • 10.30 – 13.30GHz Operating Frequency Range • 29.5dBm Output Power at 1dB Compression • 31.0 dB Typical Power Gain @ 1dB Gain Compression • -41dBc Typical OIM3 @ each tone Pout 19.0dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 10.3 13.3 GHz P1dB Output Power at 1dB Gain Compression 29 29.5 dBm G1dB Gain @1dB gain compression 28 31 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 19dBm -38 -41 dBc Input RL Input Return Loss -10 -8 dB Output RL Output Return Loss -6 dB Idd Drain Current 900 1050 mA Vdd Drain Supply Voltage 7 8 V Vgg Gate Supply Voltage -5 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 7 7.5 oC/W Tb Operating Base Plate Temperature - 30 + 80 ºC MAXIMUM RATINGS AT 25°C SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS 1,2 Vdd Drain Supply Voltage 12V 8V Vgg Gate Supply Voltage -8V -3 V Idd Drain Current Idss 1.9A Igg Gate Current 132mA 22 mA PIN Input Power 20dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C PT Total Power Dissipation 15.0W 12.6W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –THS)/RTH; where THS = Base Plate temperature |
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