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2SB557 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB557 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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1 / 3 page  JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION ・With TO-3 package ・Complement to type 2SD427 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Fig.1 simplified outline (TO-3) and symbol |
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