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ASM3P2855B Datasheet(PDF) 3 Page - PulseCore Semiconductor |
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ASM3P2855B Datasheet(HTML) 3 Page - PulseCore Semiconductor |
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3 / 7 page ![]() August 2007 ASM3P2855B rev 0.3 Notice: The information in this document is subject to change without notice. Custom Clock Generator for Fax System 3 of 7 Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VDD_FOUT Power Supply Voltage relative to GND -0.5 to +4.6 VIN Input Voltage relative to GND (Input Pins) -0.5 to VDD+0.5 V TSTG Storage temperature -65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. Recommended Operating Conditions Symbol Parameter Min Typ Max Units TA Operating Temperature 0 +70 °C VDD Core Voltage +3.0 +3.3 +3.6 V VDD_FOUT Output Voltage +3.0 +3.3 +3.6 V DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage GND - 0.3 0.8 V VIH Input high voltage 2.0 VDD + 0.3 V IIL Input low current -35 µA IIH Input high current 35 µA IXOL XOUT output low current (VXOL@0.4V, VDD=3.3V) 3 mA IXOH XOUT output high current (VXOH@2.5V, VDD=3.3V) 3 mA VOL Output low voltage (VDD = 3.3V, IOL = 10mA) 0.4 V VOH Output high voltage (VDD = 3.3V, IOH = 10mA) 2.5 V IDD Static supply current* 10 mA ICC Dynamic supply current ( VDD =3.3V) 28 mA VDD Operating Voltage 3.0 3.3 3.6 V VDD_FOUT Operating Voltage 3.0 3.3 3.6 V tON Power-up time (first locked cycle after power-up) 5 mS ZOUT Output impedance 29 Ω * XIN is pulled low |
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