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AS8E512K8 Datasheet(PDF) 4 Page - Austin Semiconductor |
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AS8E512K8 Datasheet(HTML) 4 Page - Austin Semiconductor |
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4 / 13 page ![]() AS8E512K8 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 EEPROM EEPROM EEPROM EEPROM EEPROM AS8E512K8 Austin Semiconductor, Inc. A.C. READ WAVEFORMS(1,2,3,4) NOTES: 1. CE\ may be delayed up to t ACC -t CE after the address transi- tion without inpact on t ACC . 2. OE\ may be delayed up to t CE -t OE after the falling edge of CE\ without inpact on t CE or by t ACC -t OE after an address change without inpact on t ACC . 3. t DF is specified from OE\ or CE\ whichever occurs first (C L = 5pF). 4. This parameter is characterized and is not 100% tested. 5. A17 and A18 must remain valid through the WE\ and CE\ low pulse. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC READ OPERATING CONDITIONS (-55oC<T A<+125 oC; Vcc = 5V +10%) INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL FOR AC TEST CONDITIONS In put P u ls e Leve ls 0 V to 3.0V In put R ise an d F a ll T im e s 5 nS In put an d O u tp ut 1.5V Tim in g R e fe re n c e Le ve ls OUTPUT TEST LOAD 100pF 1.8K 1.3K 5.0V ADDRESS CE\ OE\ OUTPUT OUTPUT HIGH Z t OE t ACC t DF t CE ADDRESS VALID t OH VALID !" # "" ! |
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