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AS29F040

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

21

AS29F040

Rev. 2.2 09/07

Austin Semiconductor, Inc.

ERASE AND PROGRAMMING PERFORMANCE

NOTES:

1 . Typical program and erase times assume the following conditions: 25°C, 5.0V V

CC

, 1 million cycles. Additionally, programming typicals

assume checkerboard pattern.

2. Under worst case conditions of 90°C, V

CC

= 4.5V; 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster

than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1.

See the section on DQ5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further

information on command definitions.

6. The device has a minimum guaranteed erase and program cycle endurance of 1 million cycles.

LATCHUP CHARACTERISTIC

CC

. Test conditions: V

CC

= 5.0V, one pin at a time.

PIN CAPACITANCE

NOTES:

1. Sampled, not 100% tested.

2. Test conditions T

A

= 25°C, f = 1.0 MHz

DATA RETENTION

TYP

1

MAX

2

UNIT

Sector Erase Time

1

8

sec

Chip Erase Time

8

64

sec

Byte Programming Time

7

300

µs

Chip Programming Time

3

3.6

10.8

sec

PARAMETER

LIMITS

COMMENTS

Excludes system-level overhead

5

Excludes 00h programming prior to erasure

4

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Input Capacitance

46

pF

Output Capacitance

812

pF

Control Pin Capacitance

812

pF

PARAMETER

MIN

MAX

-1.0V

-100mA

+100mA

PARAMETER

CONDITIONS

MIN

UNIT

150°C

10

Years

125°C

20

Years

Minimum Pattern Data Retention Time