P r o d u c t I n n o v a t i o n F r o m

PA119CE • PA119CEA

2

PA119U

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

80V

OUTPUT CURRENT, within SOA

5A

POWER DISSIPATION, internal

75W

INPUT VOLTAGE, differential

40V

INPUT VOLTAGE, common mode

±V

S

TEMPERATURE, pin solder — 10 sec

300°C

175°C

TEMPERATURE, storage

–65 to 150°C

OPERATING TEMPERATURE RANGE, case

–55 to 125°C

PA119

PA119A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

T

±.5

±3

±.35

±.75

mV

OFFSET VOLTAGE, vs. temperature

T

10

30

5

15

µV/°C

OFFSET VOLTAGE, vs. supply

T

10

*

µV/V

OFFSET VOLTAGE, vs. power

T

20

*

µV/W

BIAS CURRENT, initial

T

10

200

5

50

pA

BIAS CURRENT, vs. supply

T

.01

*

pA/V

OFFSET CURRENT, initial

T

5

100

3

25

pA

INPUT IMPEDANCE, DC

T

*

MΩ

INPUT CAPACITANCE

T

6

*

pF

T

±V

*

*

V

COMMON MODE REJECTION, DC

T

70

104

*

*

dB

GAIN

OPEN LOOP GAIN at 10Hz

T

111

*

dB

OPEN LOOP GAIN at 10Hz

T

74

88

*

*

dB

GAIN BANDWIDTH PRODUCT at 1MHz T

100

*

MHz

POWER BANDWIDTH, A

T

3.5

*

MHz

POWER BANDWIDTH, A

T

250

*

kHz

OUTPUT

T

±V

±V

*

*

V

T

±V

±V

*

*

V

T

±V

±V

*

*

V

SETTLING TIME to .1%

T

.3

*

µs

SETTLING TIME to .01%

T

1.2

*

µs

SLEW RATE, A

T

600

900

750

*

V/µs

SLEW RATE, A

T

650

*

V/µs

POWER SUPPLY

VOLTAGE

T

±15

±35

±40

*

*

*

V

CURRENT, quiescent

T

100

120

*

*

mA

THERMAL

T

1.46

1.64

*

*

°C/W

RESISTANCE, DC, junction to case

T

1.84

2.0

*

*

°C/W

RESISTANCE, junction to air

T

30

*

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

+85

*

*

°C

NOTES:

*

The specification of PA119A is identical to the specification for PA119 in applicable column to the left.

1.

Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation

to achieve high MTTF.

2.

The power supply voltage for all specifications is the TYP rating unless noted as a test condition.

3.

+V

4.

Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION