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TPC6901A Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TPC6901A Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page  TPC6901A 2009-07-06 2 Circuit Configuration Marking Note 4: A dot marking identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Electrical Characteristics (Ta = 25°C): NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.1 A 400 ⎯ 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.3 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 0.17 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 5 ⎯ pF Rise time tr ⎯ 35 ⎯ Storage time tstg ⎯ 680 ⎯ Switching time Fall time tf See Figure 1 circuit diagram. VCC ≈ 30 V, RL = 100 Ω IB1 = IB2 = 10 mA ⎯ 85 ⎯ ns Electrical Characteristics (Ta = 25°C): PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.1 A 200 ⎯ 500 DC current gain hFE (2) VCE = −2 V, IC = −0.3 A 125 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −300 mA, IB = −10 mA ⎯ ⎯ −0.23 V Base-emitter saturation voltage VBE (sat) IC = −300 mA, IB = −10 mA ⎯ ⎯ −1.10 V Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 8 ⎯ pF Rise time tr ⎯ 60 ⎯ Storage time tstg ⎯ 280 ⎯ Switching time Fall time tf See Figure 2 circuit diagram. VCC ≈ －30 V, RL = 100 Ω IB1 = IB2 = 10 mA ⎯ 70 ⎯ ns 6 5 4 1 2 3 Part No. (or abbreviation code) H6B Note 4 Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code Q1 (NPN) Q2 (PNP ) |
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