SSFP3N80 datasheet(2/2 Pages) GOOD-ARK

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SSFP3N80

StarMOS

T Power MOSFET

Electrical Characteristics @TJ=25

ْC(unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

800

—

VGS=0V,ID=250

μA

△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient

—

1.0

—

ْC Reference to 25ْC,ID=250μA

RDS(on)

Static Drain-to-Source On-resistance

—

4.0

4.8

Ω VGS=10V,ID=1.5A ④

VGS(th)

Gate Threshold Voltage

3.0

—

5.0

VDS=VGS,ID=250

μA

gfs

Forward Transconductance

—

3.0

—

VDS=50V,ID=1.5A

—

VDS=800V,VGS=0V

IDSS

Drain-to-Source Leakage current

—

100

μA

VDS=640V,VGS=0V,TJ=150

ْC

Gate-to-Source Forward leakage

—

100

VGS=30V

IGSS

Gate-to-Source Reverse leakage

—

-100

VGS=-30V

Total Gate Charge

—

16.5

Qgs

Gate-to-Source charge

—

3．4

—

Qgd

Gate-to-Drain("Miller") charge

—

5.8

—

ID=3A

VDS=640V

VGS=10V

td(on)

Turn-on Delay Time

—

Rise Time

—

43.5

td(off)

Turn-Off Delay Time

—

22.5

Fall Time

—

VDD=400V

ID=3A

RG=25

Ω

Internal Drain Inductance

—

4.5

—

Internal Source Inductance

—

7.5

—

Between lead,

6mm(0.25in.)

from

package

and center of

die contact

Ciss

Input Capacitance

—

543

705

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

5.5

7.5

VGS=0V

VDS=25V

=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

—

3.0

ISM

Pulsed Source Current

(Body Diode)

①

—

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

1.4

TJ=25

ْC,IS=3.0A,VGS=0V ④

trr

Reverse Recovery Time

—

642

—

Qrr

Reverse Recovery Charge

—

4.0

—

TJ=25

ْC,IF=3.0A

di/dt=100A/

μs ④

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating;pulse width limited by

③ ISD≤3.0A,di/dt≤200A/μS,VDD≤V(BR)DSS,

max.junction temperature(see figure 11)

TJ≤25

ْ C

② L = 67mH, IAS = 3.0A, VDD = 50V,

④ Pulse width≤300μS; duty cycle≤2%

RG = 25

Ω

, Starting TJ = 25°C

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